STD16NE10L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET

®
STD16NE10L
N - CHANNEL 100V - 0.07 Ω - 16A DPAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(o n)}
I_D
STD16NE10L 100 V < 0.10 Ω
16 A
s TYPICAL RDS(on) = 0.07 Ω
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VG S
I_D
I_D
I_DM(•)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/ dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
100
100
± 20
16
11
64
55
0.36
7
-65 to 175
175
( 1) ISD ≤16A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
May 2000
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