STD16NE06L Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET

®
STD16NE06L
N - CHANNEL 60V - 0.07 Ω - 16A - DPAK
STripFET™ " POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD16NE06L
60 V < 0.085 Ω 16 A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size™ "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
60
V
60
V
± 20
V
16
A
11
A
64
A
40
W
0.3
W/^oC
7
-65 to 175
175
(1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/5