STD150NH02L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 24V - 0.003 ohm - 150A ClipPAK™/IPAK STripFET™ III POWER MOSFET

STD150NH02L
N-CHANNEL 24V - 0.003 Ω - 150A ClipPAK™/IPAK
STripFET™ III POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STD150NH02L
24 V < 0.0035 Ω 150 A
s TYPICAL R_DS(on) = 0.003 Ω @ 10 V
s TYPICAL R_DS(on) = 0.005 Ω @ 5 V
s R_DS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING POWER PACKAGE
IN TAPE & REEL (SUFFIX “T4”)
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
ClipPak™
(Suffix “T4”)
DESCRIPTION
The STD150NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This
novel 0.6µ process utilizes also unique metallization
techniques that couple to a "bondless" assembly
technique result in outstanding performance with
standard DPAK outline. It is therefore ideal in high
performance DC-DC converter applications where
efficiency it to be achieved at very high out currents.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_spike(1) Drain-source Voltage Rating
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(2)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽³⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
Value
30
24
24
± 20
150
95
600
125
0.83
900
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
September 2003
1/9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.