STD12N10L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

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STD12N10L
N - CHANNEL 100V - 0.12 Ω - 12A TO-252
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
V_DSS
R_{DS(o n)}
I_D
STD12N10L
100 V < 0.15 Ω
12 A
s TYPICAL RDS(on) = 0.12 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
V_{G S}
I_D
ID
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
Tstg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1999
Va l u e
100
100
± 15
12
8
48
50
0.33
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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