STD10NF06L Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 60V - 0.1ohm - 10A DPAK STripFET™ POWER MOSFET

STD10NF06L
N-CHANNEL 60V - 0.1Ω - 10A DPAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STD10NF06L
60V
<0.12Ω
10A
s TYPICAL R_DS(on) = 0.1Ω
s SURFACE-MOUNTING DPAK (TO-252) POWER
PACKAGE IN TAPE & REEL (SUFFIX “T4”)
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC con-
verters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
I_DM (l)
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
60
60
± 15
10
7
40
30
0.2
30
50
– 55 to 175
(1) I_SD ≤10A, di/dt ≤400A/µs, V_DD =48V, T_j ≤ T_JMAX.
(2) Starting T_j = 25°C, I_d = 7A, V_DD=20 V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
November 2001
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.