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STC08IE120HP Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
STC08IE120HP
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 Ω
Preliminary Data
General features
VCS(ON)
IC
0.8 V
8A
RCS(ON)
0.10 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ very fast-switch up to 150 kHz
■ Squared RBSOA up to 1200V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Flyback / forward SMPS
■ Buck-boost converter
TO247-4L HP
Internal schematic diagrams
Description
The STC08IE120HP is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
Order codes
Part Number
Marking
STC08IE120HP
C08IE120HP
Package
TO247-4LHP
Packing
Tube
October 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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