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STC04IE170HP Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM
STC04IE170HP
Emitter switched bipolar transistor
ESBT® 1700V - 4A - 0.17 W
General features
Table 1. General features
VCS(ON)
IC
0.7V
4A
RCS(ON)
0.17Ω
■ High voltage / high current cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 1700 V
■ Very low CISS driven by RG = 47 Ω
■ Very low turn-off cross over time
■ In compliance with the 2002/93/EC European
Directive
Applications
■ Aux SMPS for three phase mains
Description
The STC04IE170HP is manufactured in
Monolithic ESBT technology, aimed to provide
the best performance in High Frequency / High
voltage applications. It is designed for use in Gate
Driven based topologies.
TO247-4L HP
Internal schematic diagrams
Order codes
Part Number
STC04IE170HP
Marking
C04IE170HP
Package
TO247-4LHP
Packing
Tube
November 2006
Rev 2
1/11
www.st.com
11