STB9NC60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™II MOSFET

STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D²PAK/I²PAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB9NC60
STB9NC60-1
600 V
600 V
< 0.75 Ω
< 0.75 Ω
9.0 A
9.0 A
s TYPICAL R_DS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
1
D²PAK
123
I²PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T_C = 25°C
I_D
I_DM (1)
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2002
Value
600
600
±30
9
5.7
36
125
1.0
3.5
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1)I_SD ≤9A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
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