STB9NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET

®
STB9NB60
N - CHANNEL 600V - 0.7Ω - 9A - I²PAK/D²PAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST B9NB6 0
600 V < 0.8 Ω
9A
s TYPICAL RDS(on) = 0.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I²PAK
TO-262
(suffix ”-1”)
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
V DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
600
600
± 30
9
5.7
36
125
1
4.5
-65 to 150
150
( 1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
January 2000
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