STB8NA50 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB8NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STB8NA50
V DSS
RDS(on )
ID
500 V < 0.85 Ω
8A
n TYPICAL R_DS(on) = 0.7 Ω
n ± 30V GATE TO SOURCE VOLTAGE RATING
n 100% AVALANCHE TESTED
n REPETITIVE AVALANCHE DATA AT 100^oC
n LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
n REDUCED THRESHOLD VOLTAGE SPREAD
n THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
n SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITCH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I2PAK
TO-262
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
I_D
I_D
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 ^oC
Derating Fact or
T_stg Storage Temperature
Tj
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
October 1995
V alu e
500
500
± 30
8
5.3
32
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
1/10