STB85NF55L Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET

STB85NF55L
STP85NF55L
N-CHANNEL 55V - 0.0060 Ω - 80A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP85NF55L
STB85NF55L
55 V
55 V
<0.008 Ω
<0.008 Ω
s TYPICAL R_DS(on) = 0.0060 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
I_D
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP85NF55L
STB85NF55L
STB85NF55LT4
MARKING
P85NF55L
B85NF55L
B85NF55L
PACKAGE
TO-220
D²PAK
D²PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Current Limited by Package.
(••) Pulse width limited by safe operating area.
September 2002
Value
55
55
± 15
80
80
320
300
2.0
10
980
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) I_SD ≤80A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 40A, V_DD = 30V
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