STB85NF55 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET

STB85NF55
STP85NF55
N-CHANNEL 55V - 0.0062 Ω - 80A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB85NF55
STP85NF55
55 V
55 V
<0.008 Ω
<0.008 Ω
80 A
80 A
s TYPICAL R_DS(on) = 0.0062 Ω
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Current Limited by Package
(••) Pulse width limited by safe operating area
January 2003
Value
55
55
± 20
80
80
320
300
2.0
10
980
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1)_{ISD ≤80A, di/dt ≤300A/µs,}
(2) _{Starting Tj = 25} o_{C ID =}
VDD
40A
≤
V(BR)DSS, Tj
V_DD = 25V
≤
TJMAX_.
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