STB7NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET

®
STB7NB60
N - CHANNEL 600V - 1.0 OMH - 7.2A - I²PAK/D²PAK
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STB7NB60
600 V
< 1.2 Ω
7.2 A
s TYPICAL R_DS(on) = 1.0 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I²PAK
TO-262
(suffix ”-1”)
3
1
D²PAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gat e-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot Tot al Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 30
7.2
4.5
28.8
125
1.0
4.5
-65 to 150
150
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
o_C
o_C
June 1998
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