STB70NF02L Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

®
STB70NF02L
N-CHANNEL 20V - 0.006 Ω - 70A D²PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
STB70NF02L
20 V < 0.009 Ω
s TYPICAL RDS(on) = 0.006 Ω
s TYPICAL Q_g = 36 nC @ 10V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
I_D
70 A
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size™” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
PRELIMINARY DATA
3
1
D²PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
20/01/2000
Va l u e
20
20
± 20
70
50
280
100
0.67
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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