STB6LNC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh™II MOSFET

STB6LNC60
N-CHANNEL 600V - 1Ω - 5.8A D²PAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB6LNC60
600 V < 1.25 Ω 5.8 A
s TYPICAL R_DS(on) = 1.0 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
3
1
D²PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM (q)
P_TOT
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T_C = 25°C
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 2001
Value
600
600
±30
5.8
3.65
23.2
100
0.8
3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
–65 to 150
°C
(1)I_SD ≤5.8A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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