STB60NF06L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET

STB60NF06L
STP60NF06L STP60NF06LFP
N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB60NF06L
STP60NF06L
STP60NF06LFP
60 V
60 V
60 V
<0.014 Ω
<0.014 Ω
<0.014 Ω
60 A
60 A
60 A(*)
s TYPICAL R_DS(on) = 0.012Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s 175 ^oC OPERATING RANGE
s LOW THRESHOLD DRIVE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s AUTOMOTIVE
3
2
1
TO-220FP
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Refer to SOA for the max allowable current values on FP-type
due to Rth value
July 2003
.
STB60NF06L
STP60NF06L
60
42
240
110
0.73
------
Value
STP60NF06LFP
60
60
± 15
60(*)
42(*)
240(*)
30
0.2
20
320
2000
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, Tj ≤ TJMAX.
(2) Starting T_j = 25 ^oC, I_D = 30A, V_DD = 30V
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