STB60NF03L Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET

®
STB60NF03L
N-CHANNEL 30V - 0.008 Ω - 60A D²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB60NF03L
30 V < 0.01 Ω 60 A
s TYPICAL RDS(on) = 0.008 Ω
s OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW THRESHOLD DRIVE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s HIGH EFFICIENCY SWITCHING CIRCUITS
PRELIMINARY DATA
3
1
D²PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
30
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
30
V_GS G ate-source Volt age
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
± 20
60
42
I_DM (•) Drain Current (pulsed)
240
P_tot T otal Dissipat ion at T_c = 25 ^oC
100
Derating Factor
0.67
EAS(1) Single Pulse Avalanche Energy
650
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1999
-65 to 175
175
( 1) starting Tj = 25 ^oC, ID = 30A , VDD = 20V
Un it
V
V
V
A
A
A
W
W /^o C
mJ
o_C
o_C
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