STB60NE06L-16 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET

®
STB60NE06L-16
N - CHANNEL 60V - 0.014Ω - 60A D²PAK
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STB60NE06L-16 60 V < 0.16 Ω 60 A
s TYPICAL RDS(on) = 0.014 Ω
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 ^oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
Va l u e
Un it
60
V
60
V
± 15
V
60
A
42
A
240
A
150
W
1
W /^o C
1
-65 to 175
175
( 1) ISD ≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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