STB5N80K5 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package

STB5N80K5
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
Order code
STB5N80K5
VDS
800 V
RDS(on) max.
ID
1.75 Ω
4A
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB5N80K5
Table 1: Device summary
Marking
Package
5N80K5
D²PAK
Packing
Tape and reel
May 2016
DocID028512 Rev 2
This is information on a product in full production.
1/15
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