STB55NF03L-1 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D²PAK/I²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP55NF03L
STB55NF03L
STB55NF03L-1
30 V
30 V
30 V
<0.013 Ω
<0.013 Ω
<0.013 Ω
55 A
55 A
55 A
s TYPICAL R_DS(on) = 0.01 Ω
s OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SWITCHING SPEED
s HIGH EFFICIENCY SWITCHING CIRCUITS
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2002
.
Value
30
30
± 16
55
39
220
80
0.53
-60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
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