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| STB50NH02L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.011ohm - 50A D²PAK STripFET™ III POWER MOSFET | |||
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STB50NH02L
N-CHANNEL 24V - 0.011 ⦠- 50A D²PAK
STripFET⢠III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB50NH02L
24 V < 0.0135 ⦠50 A
s TYPICAL RDS(on) = 0.011 ⦠@ 10 V
s TYPICAL RDS(on) = 0.015 ⦠@ 5 V
s RDS(ON) * Qg INDUSTRYâs BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX âT4â)
DESCRIPTION
The STB50NH02L utilizes the latest advanced design
rules of STâs proprietary STripFET⢠technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
3
1
D²PAK
TO-263
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(2)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS (3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
September 2003
Value
30
24
24
± 20
50
36
200
60
0.4
200
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
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