STB50NE10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET

®
STB50NE10
N - CHANNEL 100V - 0.021Ω - 50A - D²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB50NE10
100 V <0.027 Ω
50 A
s TYPICAL RDS(on) = 0.021 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM (•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1998
Va l u e
Un it
100
V
100
V
± 20
V
50
A
35
A
200
A
150
W
1
W /^o C
6
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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