STB4NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh™II MOSFET

STB4NC60
N-CHANNEL 600V - 1.8Ω - 4.2A D²PAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB4NC60
600V
< 2.2Ω
4.2A
s TYPICAL R_DS(on) = 1.8Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
3
1
D²PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
October 2001
Value
600
600
±30
4.2
2.6
16.8
100
0.8
3.5
–65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
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