STB4NB80 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

®
STB4NB80
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STB4NB80
800 V
3.3 Ω
4A
STB4NB80FP 800 V
3.3 Ω
4A
s TYPICAL RDS(on) = 3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix "T4")
123
I²PAK
TO-262
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
June 1998
Value
STB4NB80 STB4NB80FP
800
800
± 30
4
4(*)
2.4
2.4(*)
16
16
100
35
1
0.28
4.5
4.5

2000
-65 to 150
150
(1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
V
o_C
o_C
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