STB4NB50 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET

®
STB4NB50
N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK
PowerMESH™ MOSFET
TYPE
STB4NB50
V_DSS
500 V
R_DS(on)
< 2.8 Ω
I_D
3.8 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 2.5 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
123
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
I²PAK
TO-262
(suffix "-1")
D²PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
500
500
± 30
3.8
2.4
15.2
80
0.64
4.5
-65 to 150
150
(1) ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
October 1998
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