STB45NF06 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET™ POWER MOSFET

STB45NF06
N-CHANNEL 60V - 0.022Ω - 38A D2PAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STB45NF06
60V
<0.028Ω
38A
s TYPICAL R_DS(on) = 0.022Ω
s EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
Unit
60
V
60
V
±20
V
38
A
26
A
152
A
80
W
0.53
W/°C
7
V/ns
–65 to 175
°C
175
°C
(1) I_SD ≤38A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
Aug 2000
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.