STB43N65M5 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate charge and input capacitance

STB43N65M5
Automotive-grade N-channel 650 V, 0.058 Ω typ., 42 A
MDmesh™ M5 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS RDS(on) max. ID
PTOT
STB43N65M5 650 V 0.063 Ω 42 A 250 W
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely low R_DS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STB43N65M5
AM01475v1_Tab
Table 1: Device summary
Marking
Package
43N65M5
D²PAK
Packing
Tape and reel
July 2015
DocID028150 Rev 1
This is information on a product in full production.
1/16
www.st.com