STB40NF10L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STB40NF10L
N-CHANNEL 100V - 0.028Ω - 40A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB40NF10L
100 V < 0.033 Ω 40 A
s TYPICAL R_DS(on) = 0.028Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_AS (1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2001
Value
100
100
± 15
40
25
160
150
1
430
–65 to 175
175
(1) Starting T_j = 25°C, I_D = 20A, V_DD = 40V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
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