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| STB3NC90Z Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET | |||
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STB3NC90Z
N-CHANNEL 900V - 3.2⦠- 3.5A D2PAK
Zener-Protected PowerMESHâ¢III MOSFET
TYPE
VDSS
RDS(on)
ID
STB3NC90
900V
< 3.5â¦
3.5 A
s TYPICAL RDS(on) = 3.2â¦
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY⢠Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
3
1
D2PAK
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS
Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15Kâ¦)
dv/dt
Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
May 2001
Value
900
900
± 25
3.5
2.2
14
100
0.8
±50
2.5
3
â65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
(1)ISD â¤3.5A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
(*).Limited only by maximum temperature allowed
1/9
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