STB30NF10 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET

STB30NF10
STP30NF10 STP30NF10FP
N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D²PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB30NF10
STP30NF10
STP30NF10FP
100 V
100 V
100 V
<0.045 Ω
<0.045 Ω
<0.045 Ω
35 A
35 A
18 A
s TYPICAL R_DS(on) = 0.038 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
3
2
1
TO-220FP
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
May 2002
.
STB30NF10
STP30NF10
35
25
140
115
0.77
------
Value
STP30NF10FP
100
100
± 20
18
13
72
30
0.2
28
275
2000
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD ≤30A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting T_j = 25 ^oC, I_D = 15A, V_DD= 30V
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