STB3020L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET

®
STB3020L
N - CHANNEL 30V - 0.019Ω - 40A - D²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST B3020 L
30 V < 0.022 Ω 40 A
s TYPICAL RDS(on) = 0.019 Ω
s LOW GATE CHARGE A 100^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-AC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
March 1999
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
30
30
± 20
40
28
160
80
0.53
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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