STB22NE03L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

®
STB22NE03L
N - CHANNEL 30V - 0.034Ω - 22A TO-263
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB22NE03L
30 V <0.05 Ω
22 A
s TYPICAL RDS(on) = 0.034 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM (•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1999
Va l u e
Un it
30
V
30
V
± 15
V
22
A
16
A
88
A
60
W
0.4
W /^o C
6
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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