STB21NM60ND_09 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STP/F21NM60ND-STW21NM60ND
STB21NM60ND-STI21NM60ND
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET
D²PAK, I²PAK, TO-220FP, TO-220, TO-247
Features
Type
STB21NM60ND
STI21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
V_{DSS @}
T_Jmax
650 V
650 V
650 V
650 V
650 V
R_DS(on)
max
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
I_D
17 A
17 A
17 A⁽¹⁾
17 A
17 A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly
recommended for bridge topologies, in ZVS
phase-shift converters.
Table 1. Device summary
Order codes
Marking
STB21NM60ND
21NM60ND
STI21NM60ND
21NM60ND
STF21NM60ND
STP21NM60ND
21NM60ND
21NM60ND
STW21NM60ND
21NM60ND
March 2009
Rev 3
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
1/18
www.st.com
18