STB20NM60A-1 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I²PAK/TO-220/TO-220FP

STB20NM60A-1
STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tj_max - 0.25Ω - 20A I²PAK/TO-220/TO-220FP
MDmesh™ MOSFET
TYPE
V_DSS @Tj_max
R_DS(on)
I_D
STB20NM60A-1
STP20NM60A
STF20NM60A
650 V
650 V
650 V
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
20 A
20 A
20 A
s TYPICAL R_DS(on) = 0.25Ω
s HIGH dv/dt
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
123
I²PAK
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED FOR ADAPTORS IN
QUASI-RESONANT CONFIGURATION
ORDER CODES
PART NUMBER
STB20NM60A-1
STP20NM60A
STF20NM60A
MARKING
B20NM60A
P20NM60A
F20NM60A
PACKAGE
I²PAK
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
TUBE
March 2004
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