STB20NM50FD Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh™Power MOSFET With FAST DIODE

STB20NM50FD
N-CHANNEL 500V - 0.20Ω - 20A D²PAK
FDmesh™Power MOSFET (With FAST DIODE)
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STB20NM50FD
500V
< 0.25Ω
20 A
n TYPICAL R_DS(on) = 0.20Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
1
D²PAK
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
November 2001
Value
500
500
±30
20
14
80
192
0.88
6
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/7