STB20NE06 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET

®
STB20NE06
N - CHANNEL 60V - 0.06Ω - 20A D²PAK
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STB20NE06
60 V < 0.080 Ω 20 A
s TYPICAL RDS(on) = 0.06 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1999
Va l u e
Un it
60
V
60
V
± 20
V
20
A
14
A
80
A
70
0.47
W
W /^o C
7
V/ns
-65 to 175
o_C
175
o_C
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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