STB18NM60ND Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK

STB18NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet − production data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Features
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
V_DSS @
T_Jmax
650 V
R_DS(on)
max
I_D
<0.29 Ω 13 A
• The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
Table 1. Device summary
Marking
Package
D²PAK
18NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2013
This is information on a product in full production.
DocID024653 Rev 1
1/22
www.st.com
22