STB16NF06L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET™ POWER MOSFET

STB16NF06L
N-CHANNEL 60V - 0.07 Ω - 16A D²PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB16NF06L
60 V
<0.09 Ω
16 A
s TYPICAL R_DS(on) = 0.07Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 ^oC
s LOW THRESHOLD DRIVE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
February 2002
.
Value
Unit
60
V
60
V
± 16
V
16
A
11
A
64
A
45
W
0.3
W/°C
23
V/ns
127
mJ
-65 to 175
°C
-55 to 175
°C
(1) I_SD ≤ 16A, di/dt ≤ 210A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting T_j = 25 ^oC, I_D = 8A, V_DD = 30V
1/9