STB16NB25 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET

®
STB16NB25
N - CHANNEL 250V - 0.220Ω - 16A - TO-263
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST B16NB 25
250 V < 0.28 Ω 16 A
s TYPICAL RDS(on) = 0.220 Ω
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s EXTREMELY HIGH dv/dt CAPABILITY
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D
I_D
IDM(•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_{s tg} Storage T emperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
Value
Unit
250
V
250
V
± 30
V
16
A
10
A
64
A
140
1.12
W
W /^o C
5.5
-65 to 150
150
( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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