STB160NF3LL Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET™ II POWER MOSFET

STB160NF3LL
N-CHANNEL 30V - 0.0026 Ω - 160A D²PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
ST160NF3LL
30 V <0.003 Ω 160 A
s TYPICAL R_DS(on) = 0.0026 Ω
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s LOGIC LEVEL DEVICE
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D²PAK
TO-263
(Suffix “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(^∗)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽¹⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
Value
30
30
± 15
160
160
640
300
2
1.2
-55 to 175
(1) Starting T_j = 25 ^oC, I_D = 80A, V_DD = 20V
Unit
V
V
V
A
A
A
W
W/°C
J
°C
May 2002
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.