STB160NF02L Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET™ POWER MOSFET

STB160NF02L
N-CHANNEL 20V - 0.0018Ω - 160A D2PAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
STB160NF02L
20 V < 0.0027 Ω
s TYPICAL R_DS(on) = 0.0018Ω
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s VERY LOW GATE CHARGE
s 100% AVALANCHE TESTED
I_D
160 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
3
1
D²PAK
(TO-263)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
20
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
20
V
V_GS
Gate- source Voltage
±15
V
I_D (1)
Drain Current (continuos) at T_C = 25°C
160
A
I_D
Drain Current (continuos) at T_C = 100°C
113
A
I_DM (q) Drain Current (pulsed)
640
A
P_TOT
Total Dissipation at T_C = 25°C
300
W
Derating Factor
2
W/°C
E_AS (2) Single Pulse Avalanche Energy
2.65
mJ
T_stg
Storage Temperature
–65 to 175
°C
T_j
Max. Operating Junction Temperature
175
°C
(q) Pulse width limited by safe operating area
(1) Limited by Package
(2) ISD ≤100A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
February 2001
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.