STB13005_07 Datasheet, PDF (1/11 Pages) STMicroelectronics – High voltage fast-switching NPN power transistor

STB13005
High voltage fast-switching
NPN power transistor
Features
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Through hole TO-262 (I²PAK) power package
in tube (suffix “-1”)
Applications
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
123
I²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking ⁽¹⁾
Package
Packaging
STB13005-1
B13005A
B13005B
I²PAK
Tube
1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
October 2007
Rev 1
1/11
www.st.com
11