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| STB12NK80Z-S Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET | |||
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STB12NK80Z-S
N-CHANNEL 800V - 0.65⦠- 10.5A I2SPAK
Zener-Protected SuperMESHâ¢Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STB12NK80Z-S 800 V < 0.75 ⦠10.5 A 190 W
s TYPICAL RDS(on) = 0.65 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH⢠series is obtained through an
extreme optimization of STâs well established strip-
based PowerMESH⢠layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh⢠products.
123
I2SPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s IDEAL FOR HIGH DENSITY LOW PROFILE
ADAPTERS
ORDERING INFORMATION
SALES TYPE
STB12NK80Z-S
MARKING
B12NK80Z
PACKAGE
I2SPAK
PACKAGING
TUBE
February 2004
1/9
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