STB10NC50-1 Datasheet, PDF (1/7 Pages) STMicroelectronics – N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET

®
STB10NC50-1
N - CHANNEL 500V - 0.48Ω - 10A - I²PAK/D²PAK
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STB10NC50-1 500 V < 0.52 Ω 10 A
s TYPICAL RDS(on) = 0.48 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
123
I²PAK
3
1
D²PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Volt age (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Un it
500
V
500
V
± 30
V
10
A
6.3
A
40
A
135
1.08
W
W /^o C
3
-65 to 150
150
( 1) ISD ≤ 10 A, di/dt ≤100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
December 1999
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