STB10NB20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 200V - 0.30ohm - 10A - D2PAK PowerMESH] MOSFET

®
STB10NB20
N - CHANNEL 200V - 0.30Ω - 10A - D²PAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST B10NB 20
200 V < 0.40 Ω 10 A
s TYPICAL RDS(on) = 0.30 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronis has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM(•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_{s tg} Storage T emperature
T_j
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
November 1998
Value
Unit
200
V
200
V
± 30
V
10
A
6
A
40
A
85
0.68
W
W /^o C
5.5
-65 to 150
150
( 1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
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