STB100NF04L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET™ II POWER MOSFET

STB100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STB100NF04L
40 V <0.0042Ω
s TYPICAL R_DS(on) = 0.0036 Ω
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
I_D
100 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D²PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(*)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by package
February 2002
.
Value
40
40
± 16
100
70
400
300
2
3.6
1.4
-65 to 175
175
(1) I_SD ≤100A, di/dt ≤240A/µs, V_DD ≤ 32V, T_j ≤ T_JMAX
(2) Starting Tj = 25 ^oC, IAR = 50A, VDD= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
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