STAC9200 Datasheet, PDF (1/14 Pages) Integrated Device Technology – 2-CHANNEL HIGH DEFINITION AUDIO CODEC

STAC9200
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
STAC244B
Air cavity
Figure 1. Pin connection
1
1
2
3
3
1. Drain
2. Source (bottom side)
3. Gate
Datasheet - preliminary data
Features
• Improved ruggedness: V_(BR)DSS > 80 V
• Load mismatch 65:1 all phases @
200 W / 32 V / 860 MHz under 1 msec - 10%
• P_OUT = 200 W min. (250 W typ.) with 16 dB
gain @ 860 MHz
• In compliance with the 2002/95/EC European
directive
• ST air-cavity STAC^® packaging technology
Description
The STAC9200 is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband applications in
the HF to 1300 MHz frequency range. The
STAC9200 benefits from the latest generation of
efficient STAC^® package technology.
Table 1. Device summary
Order code
Marking
Package
STAC9200
STAC9200⁽¹⁾
STAC244B
1. For more details please refer to Chapter 8: Marking, packing and shipping specifications.
Packaging
Plastic tray
April 2014
DocID025416 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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