STAC4933 Datasheet, PDF (1/12 Pages) STMicroelectronics – Excellent thermal stability

STAC4933
HF/VHF/UHF RF power N-channel MOSFET
Figure 1. Pin connection
Datasheet - production data
Features
• Improved ruggedness V_(BR)DSS > 200 V
• Excellent thermal stability
• P_OUT = 300 W min. with 24 dB gain @ 30 MHz
• STAC air cavity packaging technology -
STAC^® package
Description
The STAC4933 is an N-channel MOS field-effect
RF power transistor, intended for use in 50 V ISM
applications up to 100 MHz.
1 (drain)
4 (source)
2 (source)
3 (gate)
5 (source) on
backside
Table 1. Device summary
Order code
Marking
Base qty.
Package
STAC4933
STAC4933⁽¹⁾
25 pcs
STAC177B
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.
Packaging
Plastic tray
May 2017
This is information on a product in full production.
DocID022695 Rev 2
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