STAC4932F Datasheet, PDF (1/12 Pages) STMicroelectronics – Excellent thermal stability

STAC4932F
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Preliminary data
Features
■ Excellent thermal stability
■ Common source push-pull configuration
■ P_OUT = 1000 W min. (1200 W typ.) with 26 dB
gain @ 123 MHz
■ Pulse conditions: 1 msec - 10%
■ In compliance with the 2002/95/EC
European directive
■ ST air cavity packaging technology - STAC^®
package
STAC244F
Air cavity
Description
The STAC4932F is a N-channel MOS field-effect
Figure 1. Pin connection
RF power transistor. It is intended for 100 V pulse
applications up to 250 MHz. This device is
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suitable for use in industrial, scientific and medical
applications.
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The STAC4932B benefits from the latest
generation of efficient, patent-pending package
technology, otherwise known as STAC^®.
2
2
3
1. Drain
2. Gate
3. Source
(Bottom side)
Table 1. Device summary
Order code
Marking
STAC4932F
STAC4932F
Package
STAC244F
Packaging
Plastic tray
September 2010
Doc ID 17158 Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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