STAC4932B Datasheet, PDF (1/13 Pages) STMicroelectronics – Excellent thermal stability

STAC4932B
HF/VHF/UHF RF power N-channel MOSFET
STAC244B
Air cavity
Figure 1. Pin connection
1
1
2
3
3
1. Drain
2. Source (bottom side)
3. Gate
Datasheet - production data
Features
• Excellent thermal stability
• Common source push-pull configuration
• P_OUT = 1000 W min. (1200 W typ.) with 26 dB
gain @ 123 MHz
• Pulse conditions: 1 msec - 10%
• In compliance with the 2002/95/EC European
directive
•
®
ST air-cavity STAC packaging technology
Description
The STAC4932B is an N-channel MOS field-effect
RF power transistor. It is intended for 100 V pulse
applications up to 250 MHz. This device is
suitable for use in industrial, scientific and medical
applications. The STAC4932B benefits from the
latest generation of efficient, patent-pending
®
STAC package technology.
Order code
Table 1. Device summary
Marking
Package
STAC4932B
(1)
STAC4932
STAC244B
1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.
Packaging
Plastic tray
January 2014
This is information on a product in full production.
DocID17153 Rev 7
1/13
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